The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Aug. 30, 2013
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Yi-Tsung Jan, Hsinchu, TW;

Peng-Fei Wu, Jhubei, TW;

Chih-Ming Kao, Jhubei, TW;

You-Cheng Liau, Hsinchu, TW;

Wen-Jen Chuang, New Taipei, TW;

Rong-Gen Wu, Taichung, TW;

Huan-Yu Chien, Taipei, TW;

Ting-Yu Kuo, New Taipei, TW;

Su-Chen Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/52 (2006.01); H01L 21/285 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/743 (2013.01); H01L 21/76868 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for manufacturing a contact plug is provided. The method includes providing a silicon substrate having at least one opening. A titanium layer is conformably formed in the opening. A first barrier layer is conformably formed on the titanium layer in the opening. A rapid thermal process is performed on the titanium layer and the first barrier layer. After performing the rapid thermal process, a second barrier layer is conformably formed on the first barrier layer in the opening.


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