The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Jul. 14, 2014
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Tzu-Hsuan Hsu, Chiayi County, TW;

Hang-Ting Lue, Hsinchu, TW;

Chen-Jun Wu, Changhua County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/16 (2006.01); G11C 16/04 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0408 (2013.01); G11C 16/0483 (2013.01); H01L 27/1157 (2013.01);
Abstract

A data erase method of a three dimensional (3D) memory device comprising the following steps. First, in a first phase of an erase operation, a first voltage is applied to a first semiconductor channel of the semiconductor channels to erase data stored in the memory cells defined on the first semiconductor channel and a second voltage is applied to a second semiconductor channel of the semiconductor channels, wherein the second semiconductor channel is adjacent to the first semiconductor channel. Then, in a second phase of the erase operation, the second voltage is applied to the first semiconductor channel and the first voltage is applied to the second semiconductor channel.


Find Patent Forward Citations

Loading…