The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Aug. 10, 2011
Applicants:
Shyue Seng Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Elgin Quek, Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0425 (2013.01); H01L 21/28273 (2013.01); H01L 27/11521 (2013.01); H01L 29/42328 (2013.01); H01L 29/66795 (2013.01); H01L 29/66825 (2013.01); H01L 29/7881 (2013.01);
Abstract
A split gate memory cell is fabricated with a fin structure between a memory gate stack and a select gate. Embodiments include a first channel region under the memory gate stack and a second channel region under the select gate.
Quick Actions:
Tan, Shyue. (2016). Double gated flash memory (U.S. Patent No. 9263132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9263132
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