The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Dec. 08, 2014
Applicants:

Ji-wang Lee, Gyeonggi-do, KR;

Dong-keun Kim, Gyeonggi-do, KR;

Masahiro Takahashi, Tokyo, JP;

Tsuneo Inaba, Tokyo, JP;

Inventors:

Ji-Wang Lee, Gyeonggi-do, KR;

Dong-Keun Kim, Gyeonggi-do, KR;

Masahiro Takahashi, Tokyo, JP;

Tsuneo Inaba, Tokyo, JP;

Assignees:

SK Hynix Inc., Gyeonggi-do, KR;

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 11/15 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/5607 (2013.01); G11C 11/5657 (2013.01); G11C 13/004 (2013.01); G11C 2013/0054 (2013.01);
Abstract

A semiconductor memory unit includes first to Nvariable resistance elements each having different resistance values according to values stored therein, wherein N is a natural number equal to or greater than 2; a reference resistance element having a first reference resistance value; and first to Ncomparison units which correspond to the first to Nvariable resistance elements, respectively, and each of which determines whether a resistance value of the corresponding variable resistance element is greater or less than a second reference resistance value, wherein the first to Ncomparison units are commonly coupled to the reference resistance element.


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