The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Feb. 10, 2015
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Martin Schubert, Sunnyvale, CA (US);

Shu Qin, Boise, ID (US);

Scott E. Sills, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Allen McTeer, Eagle, ID (US);

Yongjun Jeff Hu, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, IA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01);
Abstract

Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.


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