The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jul. 14, 2011
Applicants:
Jianhua Yang, Palo Alto, CA (US);
Minxian Max Zhang, Mountain View, CA (US);
Feng Miao, Mountain View, CA (US);
Inventors:
Jianhua Yang, Palo Alto, CA (US);
Minxian Max Zhang, Mountain View, CA (US);
Feng Miao, Mountain View, CA (US);
Assignee:
Hewlett Packard Enterprise Development LP, Houston, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); G11C 13/0007 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01);
Abstract
A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.