The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Jun. 05, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

SangBum Kim, Yorktown Heights, NY (US);

Daniel Krebs, Zurich, CH;

Chung Hon Lam, Peekskill, NY (US);

Charalampos Pozidis, Thalwil, CH;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); G11C 11/5678 (2013.01); G11C 13/0004 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); G11C 2213/15 (2013.01); G11C 2213/52 (2013.01); H01L 45/144 (2013.01);
Abstract

Improved phase-change memory cells are provided for storing information in a plurality of programmable cell states. A phase-change material is located between first and second electrodes for applying a read voltage to the phase-change material to read the programmed cell state. An electrically-conductive component extends from one electrode to the other in contact with the phase-change material. The resistance presented by this component to a cell current produced by the read voltage is less than that of the amorphous phase and greater than that of the crystalline phase of the phase-change material in any of the cell states.


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