The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Apr. 01, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Hui Shen, Dounan Town, TW;

Shih-Chang Liu, Alian Township, TW;

Chi-Hsin Lo, Zhubei, TW;

Chia-Shiung Tsai, Hsin-Chu, TW;

Tsun Kai Tsao, Yongkang, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); H01L 27/11521 (2013.01); H01L 21/823468 (2013.01);
Abstract

A flash memory cell structure is provided. A semiconductor structure includes a semiconductor substrate, a floating gate overlying the semiconductor substrate, a word-line adjacent to the floating gate, an erase gate adjacent to a side of the floating gate opposite the word-line, a first sidewall disposed between the floating gate and the word-line, and a second sidewall disposed between the floating gate and the erase gate. The first sidewall has a first characteristic and the second sidewall has a second characteristic. The first characteristic is different from the second characteristic.


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