The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 25, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Marcello Ravasio, Olgiate Molgora, IT;
Samuele Sciarrillo, Lomagna, IT;
Andrea Gotti, Vaprio D'Adda, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1052 (2013.01); H01L 21/28 (2013.01); H01L 21/3213 (2013.01); H01L 27/222 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01);
Abstract
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.