The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Jul. 10, 2013
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Duk Ju Na, Singapore, SG;

Lai Yee Chia, Singapore, SG;

Chang Beom Yong, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6836 (2013.01); H01L 21/76801 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/94 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05015 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/1132 (2013.01); H01L 2224/1145 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/27002 (2013.01); H01L 2224/27005 (2013.01); H01L 2224/27312 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings.


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