The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Aug. 29, 2012
Applicants:

Erh-hao Chen, Changhua County, TW;

Cha-hsin Lin, Miaoli County, TW;

Tzu-kun Ku, Hsinchu, TW;

Inventors:

Erh-Hao Chen, Changhua County, TW;

Cha-Hsin Lin, Miaoli County, TW;

Tzu-Kun Ku, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/74 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/743 (2013.01); H01L 21/02107 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method for manufacturing a through substrate via (TSV) structure, a TSV structure, and a control method of a TSV capacitance are provided. The method for manufacturing the TSV structure includes: providing a substrate having a first surface and a second surface; forming a trench in the first surface of the substrate; filling a low resistance material into the trench; forming an insulating layer on the first surface of the substrate; forming at least one opening in the first surface of the substrate, wherein the opening is located differently the trench; forming an oxide liner layer, a barrier layer and a conductive seed layer on a sidewall and a bottom of the opening and on the insulating layer of the first surface; and filling a conductive material into the opening, wherein the opening is used to form at least one via.


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