The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Mar. 14, 2013
Hitachi Kokusai Electric Inc., Tokyo, JP;
Tatsushi Ueda, Toyama, JP;
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes: accommodating a substrate having an oxide film formed thereon into a processing chamber; supplying a process gas to the substrate; performing a preprocessing step in which the process gas is excited in a state that a pressure within the processing chamber is kept at a first pressure and an electric potential of the substrate is kept at a first electric potential; and performing a main processing step by which the process gas is excited in a state that the pressure within the processing chamber is kept at a second pressure and the electric potential of the substrate is kept at a second electric potential, wherein the first pressure is lower than the second pressure and the first electric potential is lower than the second electric potential.