The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Sep. 26, 2013
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Kiran Pangal, Fremont, CA (US);

Raj K. Ramanujan, Federal Way, WA (US);

Robert W. Faber, Hillsboro, OR (US);

Rajesh Sundaram, Folsom, CA (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/12 (2006.01); G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0033 (2013.01); G11C 13/0004 (2013.01);
Abstract

Embodiments including systems, methods, and apparatuses associated with refreshing memory cells are disclosed herein. In embodiments, a memory controller may be configured to perform a read operation on one or more memory cells in a cross-point non-volatile memory such as a phase change memory (PCM). The one or more memory cells may have voltage values respectively set to a first threshold voltage or a second threshold voltage. Based on the read, the memory controller may identify the memory cells in the cross-point non-volatile memory that are set to the second threshold voltage, and refresh the voltage values of those cells without altering the voltage values of the memory cells in the cross-point non-volatile memory that are set to the first threshold voltage. Other embodiments may be described or claimed.


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