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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9256134 B1

PDFFull Text
Date of Patent:
Feb. 09, 2016

Filed:

Mar. 25, 2014

Photoresist removal

Applicant:

Advanced Technology Materials, Inc., Danbury, CT (US);

Inventors:

David W. Minsek, New Milford, CT (US);

Melissa K. Rath, Danbury, CT (US);

David D. Bernhard, Kooskia, ID (US);

Thomas H. Baum, New Fairfield, CT (US);

Assignee:

Advanced Technology Materials, Inc., Danbury, CT (US);

Attorneys:

Tristan A. Fuierer

Moore & Van Allen, PLLC

Rosa Yaghmour

Primary Examiner:

Daborah Chacko Davis

Int. Cl.
CPC ...
B08B 3/04 (2006.01); G03F 7/42 (2006.01); C11D 7/06 (2006.01); C11D 7/32 (2006.01); C11D 7/50 (2006.01); C11D 11/00 (2006.01); H01L 21/311 (2006.01); C11D 3/04 (2006.01); C11D 3/30 (2006.01); C11D 3/39 (2006.01); C11D 3/395 (2006.01); C11D 3/43 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G03F 7/425 (2013.01); C11D 3/044 (2013.01); C11D 3/30 (2013.01); C11D 3/3947 (2013.01); C11D 3/3955 (2013.01); C11D 3/3956 (2013.01); C11D 3/43 (2013.01); C11D 7/06 (2013.01); C11D 7/3209 (2013.01); C11D 7/50 (2013.01); C11D 11/0047 (2013.01); G03F 7/423 (2013.01); H01L 21/31116 (2013.01); H01L 21/31133 (2013.01); H01L 21/02052 (2013.01); Y10S 438/906 (2013.01);
Abstract

Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

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