The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Oct. 19, 2012
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Sanae Shimizu, Atsugi, JP;
Atsushi Yamada, Isehara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7781 (2013.01); H01L 29/2003 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device includes a substrate; a first nitride semiconductor layer provided over the substrate and having a nitride-polar surface; a gate electrode provided over the first nitride semiconductor layer; and a semiconductor layer provided on the first nitride semiconductor layer and only under the gate electrode, and exhibiting a polarization.