The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Mar. 25, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Theodorus Eduardus Standaert, Clifton Park, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Junjun Li, Williston, VT (US);
Balasubramanian Pranatharthi Haran, Watervliet, NY (US);
Shom Ponoth, Clifton Park, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 29/06 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 23/367 (2013.01); H01L 23/3738 (2013.01); H01L 27/0255 (2013.01); H01L 27/1203 (2013.01); H01L 29/0603 (2013.01); H01L 29/402 (2013.01); H01L 29/423 (2013.01); H01L 29/42376 (2013.01); H01L 29/6609 (2013.01); H01L 29/66742 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 27/1211 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.