The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jun. 20, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 27/115 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/225 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/225 (2013.01); H01L 21/28525 (2013.01); H01L 21/768 (2013.01); H01L 23/528 (2013.01); H01L 23/53271 (2013.01);
Abstract
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a first electrode layer, a second electrode layer and a dielectric layer between the first electrode layer and the second electrode layer. A width of the second electrode layer becomes larger in a direction away from the dielectric layer.