The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jul. 08, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor integrated circuit device includes a TSV (Through Silicon Via) extending through a substrate, a first well in the substrate adjacent a first surface of the substrate, a gate of an active device on the first well, a charging protection well, and a charging protection gate on the charging protection well. The charging protection well is disposed in the substrate adjacent the first surface of the substrate, is interposed between the TSV hole and the first well, and surrounds the TSV hole. The charging protection gate prevents the gate of the active device from being damaged when the TSV is formed especially when using a plasma etch process to form a TSV hole in the substrate.