The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Jan. 23, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Yi-Ruei Lin, Taipei, TW;

Yen-Ming Peng, Zhongli, TW;

Han-Wei Yang, Hsinchu, TW;

Chen-Chung Lai, Guanxi Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76822 (2013.01); H01L 21/76877 (2013.01); H01L 23/3178 (2013.01); H01L 23/481 (2013.01); H01L 23/562 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Embodiments of a semiconductor device structure and a method of fabricating the same are provided. The semiconductor device structure includes a substrate and a first layer formed over the substrate. The semiconductor device structure further includes a stress-reducing structure formed in the first layer, and a portion of the first layer is surrounded by the stress-reducing structure. The semiconductor device structure further includes a conductive feature formed in the portion of the first layer surrounded by the stress-reducing structure.


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