The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Sep. 16, 2011
Applicants:
Shih-hung Chen, Zhubei, TW;
Chien-an Chen, Hsin-Chu, TW;
Ying Xiao, Zhubei, TW;
Ying Zhang, Hsin-Chu, TW;
Inventors:
Shih-Hung Chen, Zhubei, TW;
Chien-An Chen, Hsin-Chu, TW;
Ying Xiao, Zhubei, TW;
Ying Zhang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31138 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01);
Abstract
An etching method comprises etching an oxide layer with a first dc bias of a plasma chamber, removing a photoresist layer with a second dc bias of the plasma chamber and etching through a liner film with a third dc bias of the plasma chamber. In order to reduce the copper deposition on the wall of the plasma chamber, the third dc bias is set to be less than the first and second dc bias.