The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Jul. 15, 2014
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Tae Gyun Kim, Icheon-si Gyeonggi-do, KR;

Hee Youl Lee, Icheon-si Gyeonggi-do, KR;

Se Hoon Kim, Gunpo-si Gyeonggi-do, KR;

Ji Hyun Seo, Seoul, KR;

Dong Hun Lee, Suwon-si Gyeonggi-do, KR;

Jung Shik Jang, Seoul, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 16/0466 (2013.01); G11C 16/26 (2013.01); H01L 27/11582 (2013.01);
Abstract

Provided are a semiconductor memory device and an operating method thereof. The semiconductor memory device may include a memory cell array having a plurality of strings each including a drain select transistor, a plurality of drain side memory cells, a pipe transistor, a plurality of source side memory cells, and a source select transistor. The semiconductor memory device may also include a peripheral circuit suitable for providing a plurality of operation voltages including an erase verify voltage to the plurality of strings, and a control logic suitable for controlling the peripheral circuit to adjust a voltage level of the erase verify voltage applied to a selected memory cell, from among the plurality of drain side memory cells and the plurality of source side memory cells, according to a distance between the selected memory cell and the pipe transistor when an erase verify operation is performed.


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