The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Mar. 25, 2013
Applicant:
Advantest Corporation, Tokyo, JP;
Inventors:
Lakshmikanth Namburi, Arcadia, CA (US);
Florent Cros, Los Angeles, CA (US);
Yohannes Desta, Arcadia, CA (US);
Assignee:
ADVANTEST CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 31/20 (2006.01); G01R 1/067 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2887 (2013.01); G01R 1/06716 (2013.01); G01R 1/06727 (2013.01);
Abstract
A method for testing a semiconductor device. The method comprises moving a probe in a vertical direction towards an electrical structure on a semiconductor device to position the probe alongside the electrical structure. A tip of the probe is positioned lower than an elevation of an outermost periphery of the electrical structure. The method also includes moving the probe in a lateral direction towards the electrical structure to contact the electrical structure. The probe tip mechanically and electrically engages the electrical structure.