The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2016

Filed:

Mar. 17, 2010
Applicants:

Marie-paule Besland, Orvault, FR;

Emeline Souchier, Donzere, FR;

Laurent Carlo, Nantee, FR;

Benoit Corraze, Carquefou, FR;

Etienne Janod, La Chapelle sur Erdre, FR;

Julie Martial, Lussas et Nontronneau, FR;

Inventors:

Marie-Paule Besland, Orvault, FR;

Emeline Souchier, Donzere, FR;

Laurent Carlo, Nantee, FR;

Benoit Corraze, Carquefou, FR;

Etienne Janod, La Chapelle sur Erdre, FR;

Julie Martial, Lussas et Nontronneau, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/34 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0623 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01);
Abstract

The invention relates to a method for preparing a thin film of at least one compound of formula AMX, where: A is Ga or Ge; M is V, Nb, Ta or Mo; and X is S or Se. Said method includes the following steps: i) a step of forming a thin film of at least one compound of formula AMXby the magnetron spraying of a target including at least one compound of said formula AMX, in an atmosphere including at least one inert gas; and ii) a step of annealing the thin film formed during step i) by heat treating; wherein step i) and/or step ii) are carried out in the presence of sulphur when X is S or in the presence of selenium when X is Se.


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