The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Apr. 23, 2008
Applicants:
Kazuyoshi Inoue, Chiba, JP;
Futoshi Utsuno, Chiba, JP;
Katsunori Honda, Chiba, JP;
Inventors:
Assignee:
IDEMITSU KOSAN CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); C01G 15/00 (2006.01); C01G 9/02 (2006.01); C01G 19/00 (2006.01); C01G 19/02 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); H01L 21/02 (2006.01); C03C 17/23 (2006.01);
U.S. Cl.
CPC ...
C01G 15/00 (2013.01); C01G 9/02 (2013.01); C01G 15/006 (2013.01); C01G 19/006 (2013.01); C01G 19/02 (2013.01); C03C 17/23 (2013.01); C23C 14/08 (2013.01); C23C 14/086 (2013.01); C23C 14/58 (2013.01); C23C 14/5826 (2013.01); C23C 14/5853 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02573 (2013.01); H01L 21/02581 (2013.01); H01L 21/02592 (2013.01); H01L 21/02631 (2013.01); C01P 2002/50 (2013.01); C01P 2002/72 (2013.01); C01P 2006/40 (2013.01);
Abstract
An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.
Inoue, Kazuyoshi. (2016). Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element (U.S. Patent No. 9249032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9249032
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile