The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Aug. 19, 2008
Applicant:
Yuichi Oshima, Tsuchiura, JP;
Inventor:
Yuichi Oshima, Tsuchiura, JP;
Assignee:
SCIOCS COMPANY LIMITED, Hitachi-shi, Ibaraki-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 33/00 (2010.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); C30B 25/02 (2013.01); C30B 29/403 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/02664 (2013.01);
Abstract
A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2×10cmor more and 3×10cmor less, and a thermal conductivity of 1.2 W/cmK or more and 3.5 W/cmK or less. Alternatively, the substrate has an electron mobility μ [cm2/Vs] of more than a value represented by logμ=17.7−0.288 logn and less than a value represented by logμ=18.5−0.288 logn, where the substrate has a n-type carrier concentration n [cm] that is 1.2×10cmor more and 3×10cmor less.