The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Dec. 15, 2014
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Jean-Michel Hartmann, Montbonnot Saint-Martin, FR;
Yann Bogumilowicz, Grenoble, FR;
Jean-Marc Fedeli, Saint-Egrève, FR;
Abstract
Fabrication of a photodetector is performed on a substrate comprising a first portion successively provided with a first semiconductor film, an electrically insulating layer, a second semiconductor film, and a protection layer. The substrate also comprises a second portion not comprising the second semiconductor film. It further comprises a third portion not comprising the second semiconductor film and the protection layer. The second semiconductor film is etched in the first portion to form a cavity. A PIN/NIP diode is formed in the third portion at least by means of deposition of a third semiconductor material which also comes and fills the cavity. A conversion layer is deposited to absorb a light signal originating from the second semiconductor film and to convert the light signal into an electric signal, the conversion layer electrically connecting the PIN/NIP diode.