The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jan. 02, 2014
United Microelectronics Corp., Hsin-Chu, TW;
An-Hung Lin, New Taipei, TW;
Bo-Jui Huang, Hsinchu, TW;
Kun-Yi Chou, New Taipei, TW;
Hsiao-Wen Liu, New Taipei, TW;
Kai-Cheng Chang, Taichung, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region encompassing the source region, and a doped layer formed under the base region. The drain region and the source region include a first conductivity type, the base region and the doped layer include a second conductivity type, and the second conductivity type is complementary to the first conductivity type. A top of the doped layer contacts a bottom of the base region. A width of the doped layer is larger than a width of the base region.