The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Sep. 03, 2013
United Microelectronics Corp., Hsinchu, TW;
Shin-Chi Chen, Penghu County, TW;
Chih-Yueh Li, Taipei, TW;
Shui-Yen Lu, Hsinchu County, TW;
Yuan-Chi Pai, Tainan, TW;
Fong-Lung Chuang, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device is provided. A substrate having a first gate and a second gate respectively formed in a first region and a second region is provided. An underlayer is formed on the substrate to cover the first gate in the first region and the second gate in the second region. A patterned mask with a predetermined thickness is formed on the underlayer in the first region. The underlayer corresponding to the second gate in the second region is removed by the patterned mask to expose the second gate, wherein the underlayer corresponding to the first gate in the first region is partially consumed to expose part of the first gate.