The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Aug. 07, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Shigeki Hattori, Kanagawa, JP;

Masaya Terai, Kanagawa, JP;

Hideyuki Nishizawa, Tokyo, JP;

Koji Asakawa, Kanagawa, JP;

Yoshiaki Fukuzumi, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/511 (2013.01); H01L 29/7883 (2013.01);
Abstract

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.


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