The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Apr. 03, 2015
Marvell International Ltd., Hamilton, BM;
Albert Wu, Palo Alto, CA (US);
Pantas Sutardja, Los Gatos, CA (US);
Winston Lee, Palo Alto, CA (US);
Peter Lee, Pleasanton, CA (US);
Chien-Chuan Wei, San Diego, CA (US);
Runzi Chang, San Jose, CA (US);
Marvell International Ltd., Hamilton, BM;
Abstract
Methods and structures for transistors having reduced source contact to gate spacings in semiconductor devices are disclosed. In one embodiment, a method of forming a transistor can include: forming a gate over an active area of the transistor; forming source and drain regions aligned to the gate in the active area; forming source and drain contacts over the source and drain regions, where a spacing from the gate to the source contact of the transistor is less than a spacing from the gate to the drain contact of the transistor; and using one or more modified masks for forming doping profiles for the source region and the drain region.