The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Sep. 16, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Renata Camillo-Castillo, Essex Junction, VT (US);
David L. Harame, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Vikas K. Kaushal, Essex Junction, VT (US);
Marwan H. Khater, Astoria, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 29/08 (2006.01); H01L 29/732 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0826 (2013.01); H01L 29/0804 (2013.01); H01L 29/1004 (2013.01); H01L 29/66234 (2013.01); H01L 29/7325 (2013.01); H01L 29/66242 (2013.01);
Abstract
Device structures and fabrication methods for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of sidewalls with a width between an opposite pair of the sidewalls that varies with increasing distance from the top surface of the substrate. A collector pedestal of the bipolar junction transistor is formed in the trench.