The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

May. 19, 2014
Applicant:

Powerchip Technology Corporation, Hsinchu, TW;

Inventors:

Zih-Song Wang, Hsinchu, TW;

Chia-Ming Wu, Taipei, TW;

Assignee:

Powerchip Technology Corporation, Hsinchu Science Park, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/3213 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0337 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01);
Abstract

A semiconductor process for manufacturing particular patterns includes the steps of forming a target layer and evenly-spaced core bodies on a substrate, conformally forming a hard mask layer, forming a first photoresist covering a predetermined region on the hard mask layer wherein the predetermined region encompasses at least two core bodies, performing a first etch process to remove a portion of the hard mask layer outside the predetermined region and expose a number of core bodies, removing the exposed core bodies, forming a second photoresist at least encompassing all the recesses in the predetermined region, and performing a second etch process to pattern the target layer.


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