The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Dec. 23, 2014
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Tokyo, JP;
Kohei Sasaki, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Tokyo, JP;
Abstract
A method of forming a GaO-based crystal film includes epitaxially growing a GaO-based crystal film on a (001)-oriented principal surface of a GaO-based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a GaO-based substrate with a (001)-oriented principal surface, and a GaO-based crystal film formed on the principal surface of the GaO-based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.