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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9245749 B1

PDFFull Text
Date of Patent:
Jan. 26, 2016

Filed:

Dec. 23, 2014

Method of forming ga2o3-based crystal film and crystal multilayer structure

Applicants:

Tamura Corporation, Tokyo, JP;

National Institute of Information and Communications Technology, Tokyo, JP;

Inventors:

Kohei Sasaki, Tokyo, JP;

Masataka Higashiwaki, Tokyo, JP;

Assignees:

TAMURA CORPORATION, Tokyo, JP;

NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY, Tokyo, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Jami M Valentine

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 25/20 (2006.01); C30B 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/778 (2006.01); H01L 29/812 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C30B 23/025 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/16 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02587 (2013.01); H01L 29/24 (2013.01); H01L 29/7787 (2013.01); H01L 29/7838 (2013.01); H01L 29/812 (2013.01); H01L 29/872 (2013.01); H01L 21/02631 (2013.01);
Abstract

A method of forming a GaO-based crystal film includes epitaxially growing a GaO-based crystal film on a (001)-oriented principal surface of a GaO-based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a GaO-based substrate with a (001)-oriented principal surface, and a GaO-based crystal film formed on the principal surface of the GaO-based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.

Find Patent Forward Citations

Sasaki, Kohei. (2016). Method of forming ga2o3-based crystal film and crystal multilayer structure (U.S. Patent No. 9245749). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9245749

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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