The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Feb. 24, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Takayuki Karakawa, Sendai, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); C23C 16/45542 (2013.01); C23C 16/45551 (2013.01); C23C 16/511 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract
Disclosed is a method of forming a nitride film on an object to be processed ('processed object'). The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b).