The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Dec. 13, 2012
Osamu Arisumi, Mie, JP;
Toshihiko Iinuma, Mie, JP;
Osamu Arisumi, Mie, JP;
Toshihiko Iinuma, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device including a first dielectric film, a floating gate portion, second and third dielectric films, a control gate portion, and a recess on the side face of the floating gate portion. The second dielectric film for element isolation is embedded between a height position of a lower portion of the side face of the floating gate portion and a height position inside the semiconductor substrate. The third dielectric film covers an upper surface and a side face portion of the floating gate portion up to a height position of an upper surface of the second dielectric film, and on the second dielectric film. A height position of an interface between the second and third dielectric films is between a height position of a center of the recess and a position in a predetermined range below the height position of the center of the recess.