The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Nov. 26, 2012
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
June-hee Lee, Hwasung-si, KR;
Jae-yeol Song, Seoul, KR;
Hye-Ian Lee, Hwasung-si, KR;
Hong-bae Park, Seoul, KR;
Sang-jin Hyun, Suwon-si, KR;
Abstract
A semiconductor device includes a fin-type active region; a gate dielectric layer covering an upper surface and opposite lateral surfaces of the fin-type active region; and a gate line extending on the gate dielectric layer to cover the upper surface and opposite lateral surfaces of the fin-type active region and to cross the fin-type active region. The gate line includes an aluminum (Al) doped metal-containing layer extending to cover the upper surface and opposite lateral surfaces of the fin-type active region to a uniform thickness, and a gap-fill metal layer extending on the Al doped metal-containing layer over the fin-type active region. Related fabrication methods are also described.