The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Jun. 21, 2013
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Shan Sun, Colorado Springs, CO (US);
Robert Sommervold, Colorado Springs, CO (US);
Thomas E. Davenport, Denver, CO (US);
Donald J. Verhaeghe, Colorado Springs, CO (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); H01L 49/02 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); G01R 31/2872 (2013.01);
Abstract
A method of minimizing imprint in a ferroelectric capacitor uses a gradually attenuated AC field to electrically depolarize the ferroelectric capacitor before being packaged. The AC field is linearly attenuated, and generated using a series of voltage pulses, down to a minimum allowed voltage. A final pulse is a positive voltage to minimize hydrogen degradation during packaging. Thermal depoling can also be used.