The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Apr. 09, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Masanori Minamio, Osaka, JP;

Tatsuo Sasaoka, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H01L 23/495 (2006.01); H01L 23/433 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49558 (2013.01); H01L 21/565 (2013.01); H01L 21/566 (2013.01); H01L 23/29 (2013.01); H01L 23/4334 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/49586 (2013.01); H01L 24/48 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1815 (2013.01);
Abstract

An encapsulated semiconductor device includes: a first conduction path formative plate; a second conduction path formative plate joined to the first conduction path formative plate; a power element bonded to the first conduction path formative plate; a heatsink held by the first conduction path formative plate with an insulation sheet interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin configured to encapsulate the first and second conduction path formative plates. A through hole or a lead gap is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.


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