The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Feb. 21, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hidenori Fujii, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/73 (2006.01); H01L 21/66 (2006.01); H01L 21/18 (2006.01); G01K 7/01 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01K 7/01 (2013.01); H01L 21/18 (2013.01); H01L 27/0255 (2013.01); H01L 27/0629 (2013.01); H01L 29/66992 (2013.01); H01L 29/7397 (2013.01);
Abstract
A semiconductor device includes: a semiconductor substrate; a first insulating film on a surface of the semiconductor substrate; a temperature sensing diode on the first insulating film; a trench extending inward from the surface of the semiconductor substrate; and a trench electrode embedded in the trench via a second insulating film and connected to the temperature sensing diode.