The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
May. 28, 2014
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Kazuyuki Hayashi, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Abstract
To provide an EUV mask blank which has an absorber layer having such a structure that the phase difference between a reflective layer and the absorber layer is in the vicinity of 180°, and the change of the phase difference between the reflective layer and the absorber layer is small to the film thick change of the absorber layer, and of which the absorber layer can be expected to be further thinner than a conventional absorber layer. A reflective mask blank for EUV lithography, comprising a substrate, and a reflective layer for reflecting EUV light and an absorber layer for absorbing EUV light formed in this order on the substrate,