The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

Dec. 25, 2009
Applicants:

Kazuhiro Sakai, Yokkaichi, JP;

Tetsuya Atsumi, Suzuka, JP;

Yukiyasu Miyata, Yokkaichi, JP;

Inventors:

Kazuhiro Sakai, Yokkaichi, JP;

Tetsuya Atsumi, Suzuka, JP;

Yukiyasu Miyata, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 3/00 (2006.01); B08B 7/04 (2006.01); C30B 29/06 (2006.01); C01B 33/037 (2006.01); C01B 33/035 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); C01B 33/035 (2013.01); C01B 33/037 (2013.01);
Abstract

A method of washing polycrystalline silicon is provided. The method includes a step of acid cleaning in which the polycrystalline silicon is cleaned with an acid solution and a step of a water cleaning in which the polycrystalline silicon is cleaned by pure water after the step of acid cleaning. In the step of water cleaning, residual acid solution on the surface of the polycrystalline silicon is removed by immersing the polycrystalline silicon in pure water held in a water cleaning bath, and replacing the pure water in the water cleaning bath at least once. The electrical conductivity (C) of the pure water in the water cleaning bath is measured. Based on the reading of the electrical conductivity (C), the timing for finishing the step of water cleaning is decided.


Find Patent Forward Citations

Quick Actions:

Sakai, Kazuhiro. (2016). Method of washing polycrystalline silicon, apparatus for washing polycrystalline silicon, and method of producing polycrystalline silicon (U.S. Patent No. 9238876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9238876

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…