The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Mar. 29, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Yoshiyuki Nagatomo, Saitama, JP;

Hiroya Ishizuka, Koshigaya, JP;

Toshiyuki Nagase, Gotenba, JP;

Yoshirou Kuromitsu, Saitama, JP;

Masakazu Edo, Susono, JP;

Hideyuki Miyake, Susono, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); C23C 8/00 (2006.01); H05K 7/20 (2006.01); H01L 23/373 (2006.01); H01L 23/473 (2006.01); C04B 37/02 (2006.01); H01L 23/40 (2006.01);
U.S. Cl.
CPC ...
H05K 7/209 (2013.01); C04B 37/026 (2013.01); H01L 23/3735 (2013.01); H01L 23/473 (2013.01); C04B 2235/6584 (2013.01); C04B 2237/121 (2013.01); C04B 2237/128 (2013.01); C04B 2237/343 (2013.01); C04B 2237/366 (2013.01); C04B 2237/368 (2013.01); C04B 2237/402 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/86 (2013.01); H01L 23/4006 (2013.01); H01L 2224/32225 (2013.01);
Abstract

This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer () having a Mg-containing compound () (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer () is within a range from 5 μm to 80 μm.


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