The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Apr. 28, 2015
National University of Singapore, Singapore, SG;
Yonsei University, Seoul, KR;
Li Ming Loong, Singapore, SG;
Hyunsoo Yang, Singapore, SG;
Wonho Lee, Seoul, KR;
Jong-Hyun Ahn, Seoul, KR;
Charanjit Singh Bhatia, Singapore, SG;
National University of Singapore, Singapore, SG;
Yonsei University, Seoul, KR;
Abstract
Embodiments of the invention provide a method for fabricating a magnetoresistive device. The method comprises: releasing a multi-layer magnetoresistive structure for forming the magnetoresistive device from a first substrate to relax an intrinsic stress in the multi-layer magnetoresistive structure such that the magnetic and/or magnetoresistive properties of the magnetoresistive device can be improved. The magnetic and/or magnetoresistive properties include, but are not limited to coercivity, squareness or abruptness of switching, magnetoresistance (MR) and resistance of the magnetoresistive device.