The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Dec. 16, 2013
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/119 (2006.01); H01L 29/788 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 21/3215 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7883 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/02573 (2013.01); H01L 21/31053 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/3215 (2013.01); H01L 21/32155 (2013.01); H01L 21/76224 (2013.01); H01L 29/42324 (2013.01); H01L 29/42376 (2013.01); H01L 21/26586 (2013.01); H01L 21/26593 (2013.01);
Abstract
The method for fabricating a semiconductor device is provided. A doped semiconductor layer is formed over the substrate. The doped semiconductor layer is patterned to form a plurality of doped semiconductor patterns. An implantation process is performed to implant a dopant into the doped semiconductor patterns. A process temperature of the implantation process is no more than about −50° C. The dopants of the implantation process and the doped semiconductor patterns have the same conductivity type.