The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jan. 23, 2014
E Ink Holdings Inc., Hsinchu, TW;
Hsiao-Wen Zan, Hsinchu, TW;
Chuang-Chuang Tsai, Hsinchu, TW;
Pei-Chen Yu, Hsinchu, TW;
Hung-Chuan Liu, Hsinchu, TW;
Bing-Shu Wu, Hsinchu, TW;
Yi-Chun Lai, Hsinchu, TW;
Wei-Tsung Chen, Hsinchu, TW;
E Ink Holdings Inc., Hsinchu, TW;
Abstract
An active device provided by the invention is disposed on a substrate and includes a gate, a gate insulating layer, an oxide semiconductor channel layer, a plurality of nano conductive wires, a source and a drain. The gate insulating layer is disposed between the gate and the oxide semiconductor channel layer. The nano conductive wires are distributed in the oxide semiconductor channel layer, in which the nano conductive wires do not contact the gate insulating layer and the nano conductive wires are arranged along a direction and not intersected with each other. The source and the drain are disposed on two sides opposite to each other of the oxide semiconductor channel layer, in which a portion of the oxide semiconductor channel layer is exposed between the source and the drain.