The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
May. 11, 2015
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ruilong Xie, Niskayuna, NY (US);
Ajey Poovannummoottil Jacob, Albany, NY (US);
Assignee:
GLOBALFOUNDIRES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/42372 (2013.01); H01L 29/66787 (2013.01); H01L 29/66795 (2013.01); H01L 29/78603 (2013.01);
Abstract
One method disclosed includes, among other things, removing a sacrificial gate structure to thereby define a replacement gate cavity, performing an etching process through the replacement gate cavity to define a fin structure in a layer of semiconductor material using a patterned hard mask exposed within the replacement gate cavity as an etch mask and forming a replacement gate structure in the replacement gate cavity around at least a portion of the fin structure.