The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Mar. 22, 2012
Zhijiong Luo, Poughkeepsie, NY (US);
Zhengyong Zhu, Beijing, CN;
Haizhou Yin, Poughkeepsie, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Zhijiong Luo, Poughkeepsie, NY (US);
Zhengyong Zhu, Beijing, CN;
Haizhou Yin, Poughkeepsie, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Abstract
A semiconductor memory device and a method for accessing the same are disclosed. The semiconductor memory device comprises a memory transistor, a first control transistor and a second control transistor, wherein a source electrode and a gate electrode of the first control transistor are coupled to a first bit line and a first word line respectively, a drain electrode and a gate electrode of the second control transistor are coupled to a second word line and a second bit line respectively, a gate electrode of the memory transistor is coupled to a drain electrode of the first control transistor, a drain electrode of the memory transistor is coupled to a source electrode of the second control transistor, and a source electrode of the memory transistor is coupled to ground, and wherein the memory transistor exhibits a gate electrode-controlled memory characteristic. The semiconductor memory device increases integration level and decreases refresh frequency.