The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jun. 12, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tsung-Chieh Tsai, Chu-Bei, TW;
Yung-Che Albert Shih, Hsinchu, TW;
Jhy-Kang Ting, Baoshan Township, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/0207 (2013.01); H01L 29/66545 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming a first metal gate electrode over a substrate, forming a second metal gate electrode over the substrate, removing at least a part of the first metal gate electrode to form a first opening, and filling the first opening with a non-conductive material.