The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2016

Filed:

Nov. 27, 2012
Applicant:

Xilinx, Inc., San Jose, CA (US);

Inventors:

Praful Jain, Ghaziabad, IN;

James Karp, Saratoga, CA (US);

Michael J. Hart, Palo Alto, CA (US);

Assignee:

XILINX, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 23/552 (2006.01); H01L 21/02 (2006.01); G11C 11/412 (2006.01); H01L 27/02 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 23/552 (2013.01); G11C 11/4125 (2013.01); H01L 21/02697 (2013.01); H01L 27/0207 (2013.01); H01L 27/1104 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; a P-well formed on the substrate and having N-type transistors of a memory cell; and an N-well formed on the substrate and having P-type transistors of the memory cell; wherein the N-well has minimal dimensions for accommodating the P-type transistors.


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