The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Feb. 03, 2012
Carsten Ahrens, Pettendorf, DE;
Rudolf Berger, Regensburg, DE;
Manfred Frank, Nittendorf, DE;
Uwe Hoeckele, Regensburg, DE;
Bernhard Knott, Neumarkt, DE;
Ulrich Krumbein, Rosenheim, DE;
Wolfgang Lehnert, Lintach, DE;
Berthold Schuderer, Regensburg, DE;
Juergen Wagner, Nittendorf, DE;
Stefan Willkofer, Regensburg, DE;
Carsten Ahrens, Pettendorf, DE;
Rudolf Berger, Regensburg, DE;
Manfred Frank, Nittendorf, DE;
Uwe Hoeckele, Regensburg, DE;
Bernhard Knott, Neumarkt, DE;
Ulrich Krumbein, Rosenheim, DE;
Wolfgang Lehnert, Lintach, DE;
Berthold Schuderer, Regensburg, DE;
Juergen Wagner, Nittendorf, DE;
Stefan Willkofer, Regensburg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. The at least one first trench is produced between a first semiconductor body region for a first semiconductor device and a second semiconductor body region for a second semiconductor device. An isolating trench extends from the first side of the semiconductor body in the direction toward the second side of the semiconductor body between the first and second semiconductor body regions in such a way that at least part of the insulation material of the first trench adjoins at least a sidewall of the isolating trench. The second side of the semiconductor body is partly removed as far as the isolating trench.